PART |
Description |
Maker |
MAX8550AETI |
Intergrated DDR Power-Solution for Desktops, Notebooks, and Graphi Bill
|
Maxim Integrated Products, Inc.
|
APW8819QAI-TYG APW8819QBI-TYG APW8819QAI-TRG APW88 |
DDR TOTAL POWER SOLUTION SYNCHRONOUS BUCK CONTROLLER WITH 1.5A LDO
|
Anpec Electronics Coropration
|
CY28347OC CY28347OCT |
Universal Single-chip Clock Solution for VIA P4M266/KM266 DDR Systems
|
SpectraLinear Inc
|
CY28347ZC CY28347ZCT |
Universal Single-chip Clock Solution for VIA P4M266/KM266 DDR Systems
|
SpectraLinear Inc
|
AWT6146 |
QUAD BAND POWER AMPLIFIER MODULE WITH INTERGRATED POWER CONTROL
|
ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
STK760 STK761 STK711 STK752 STK756 STK711-490 STK7 |
Intergrated Circuit VOLTAGE REGULATOR (STK7xx) Intergrated Circuit VOLTAGE REGULATOR Aluminum Snap-In Capacitor; Capacitance: 4700uF; Voltage: 50V; Case Size: 22x40 mm; Packaging: Bulk
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
IX2R11 IX2R11M6 IX2R11P7 IX2R11S3 |
Power Intergrated ICs 2A Half-Bridge Driver
|
IXYS Corporation
|
KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61 16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
W91031 W91031S |
Communication IC > Caller ID Decoder LOW POWER CMOS INTERGRATED CIRCUIT
|
WINBOND[Winbond]
|
KS2206B KS2206BN |
The KA2206B is a monolithic intergrated dircuit consisting of a 2-channel power amplifier.
|
Samsung semiconductor
|
GRM1885C1H181JA01D GRM188R71H102KA01B GRM188R61E10 |
6A HIGHLY INTERGRATED SUPLRBUCK USER GUIDE FOR IR3895 EVALUATION BOARD 6A HIGHLY INTERGRATED SUPLRBUCK
|
International Rectifier
|
IXDD430YI IXDD430 IXDD430CI IXDS430 IXDS430SI IXDN |
Power Intergrated ICs 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
|
IXYS Corporation
|